Furnaces for growing crystals by Kyropoulos method (GOI) and Stepanov method (EFG).
1. EQUIPMENT
а)Furnaces for growing crystals according to the Kyropoulos method (GOI)
| «TechSapphire» | ||||||
| STATIONS FOR GROWING SAPPHIRE CRYSTALS | ||||||
| Specifications: | ||||||
| Diameter/mass of crystal (mm/kg) | 200/32 | 300/65 | 300/85 | 350/100 | 400/150 | |
| Maximum possible total power consumption for melting (kVA) | 55 | 65 | 75 | 85 | 90 | |
| Real power consumption during the technological process (kVA) | 38,5 | 47,7 | 65 | 70 | 75 | |
| Supply mains (V, AC) | 380/480, 3 phase (depends customer’s requirement) | |||||
| Heating method | resistive (tungsten heater) | |||||
| Heater’s supply voltage (V) | 12 AC/DC, 24 AC/DC (depends modification) | |||||
| Control system | PLC (programmable controller)
Provides automation overall crystal growing process, except seeding |
|||||
| Growing process supervision |
|
|||||
| Controlled parameters in the crystal growing program |
|
|||||
| Cooling system | Circulating water in closed system, under the automation control of software | |||||
| Dimensions (WxLxH, mm) | 2200x2000x2300 | |||||


We grow optical quality sapphire crystals weighing 32 kg with a diameter of 200 mm; 65,85,100, 150 kg with a diameter up to 300mm;
б) Control system and software for crystal growth process by modified Kyropoulos method (GOI);
1.Control system and software development for sapphire crystal growth equipment according to customer’s specifications.
2.Technical support and software update.
2.Equipment
а) Тепловые узлы для ростовых и отжиговых установок.
1.Self-designed hot zones are made of various materials for long life, high energy efficiency and low maintenance costs..
2.Hot zone consumable parts in accordance with customer’s drawings.
3.Self-designed or customized heating units made of different materials.
б) Crystal processing tool sets


