Furnaces for growing crystals by Kyropoulos method (GOI) and Stepanov method (EFG).
а)Furnaces for growing crystals according to the Kyropoulos method (GOI)
|STATIONS FOR GROWING SAPPHIRE CRYSTALS|
|Diameter/mass of crystal (mm/kg)||200/32||300/65||300/85||350/100||400/150|
|Maximum possible total power consumption for melting (kVA)||55||65||75||85||90|
|Real power consumption during the technological process (kVA)||38,5||47,7||65||70||75|
|Supply mains (V, AC)||380/480, 3 phase (depends customer’s requirement)|
|Heating method||resistive (tungsten heater)|
|Heater’s supply voltage (V)||12 AC/DC, 24 AC/DC (depends modification)|
|Control system||PLC (programmable controller)
Provides automation overall crystal growing process, except seeding
|Growing process supervision||
|Controlled parameters in the crystal growing program||
|Cooling system||Circulating water in closed system, under the automation control of software|
|Dimensions (WxLxH, mm)||2200x2000x2300|
We grow optical quality sapphire crystals weighing 32 kg with a diameter of 200 mm; 65,85,100, 150 kg with a diameter up to 300mm;
б) Control system and software for crystal growth process by modified Kyropoulos method (GOI);
1.Control system and software development for sapphire crystal growth equipment according to customer’s specifications.
2.Technical support and software update.
а) Тепловые узлы для ростовых и отжиговых установок.
1.Self-designed hot zones are made of various materials for long life, high energy efficiency and low maintenance costs..
2.Hot zone consumable parts in accordance with customer’s drawings.
3.Self-designed or customized heating units made of different materials.
б) Crystal processing tool sets