Октябрь 2018 г.

 

 

сапфир 150кг

The manufacture of new furnaces weighing 150 kg of crystal was successfully mastered, which made it possible to produce parts with a diameter of more than 300 mm and a length of 350 mm.

Parameter name unit number description
Sapphire crystal growth method Modified Kyropulos (KY) Technology and design development on the base of own long term experience
Crystal weight kg 150
Crystal size:

Diameter (max)

High (max)

mm  

330

500

Crucible size;
Diameter (O.D.)High, total
mm 400

620

Tungsten crucible
Heating method Resistive, tungsten heater New design heater, long life time
Power supply main (50/60 Hz) V 380/400 3-phase, 5 wire
Heater’s supply voltage V 12 AC/DC 2 modifications, SCR or IGBT
Max power consumption (kW) kW 90
Actual power consumption at seeding kW 75 High energy saving
Total process (cycle) power consumption kW/h 20.000 Total process (whole cycle) time 16-17 days
Heating power control accuracy % +/-0,01 High accuracy power control
Grown crystal weight sensor capacity up to kg 150
Growing crystal weight measurement accuracy gr +/-5 Growing crystal actual weight (weight increment) control
Pulling shaft travelling rate mm/h 0.1-2.5 150 mm shaft travel length
Cooling system (water) Circulating water in closed system, under the automation control of software
Inlet water temperature С 20-30 distilled recycling water
Cooling water temperature stability С +/-2
Outlet water temperature, up to С 45 Water high temperature alarm
Water flow – approx. m3/h 8-9 adjustable
Inlet water pressure 105Pa/kgf/cm2 2.5+/-0.5 adjustable
Control system PLC (programmable controller)

Provides automation overall crystal growing process, except seeding

Growing process supervision
  • on the control panel, near the furnace
  • from the dispatcher’s PC in the control room
  • online via internet
Controlled parameters in the crystal growing program
  • heater voltage, current & power
  • growing crystal mass & weight increment in time
  • temperature of cooling water, chamber’s heat-sink value
  • crystal pulling & traverse speed
  • vacuum level in the growing chamber
Hot zones
  • made from refractory metals or
  • made from special ceramics and refractory metals
Dimensions (WxLxH) mm 2200x2000x2300
Total weight (with hot zone) kg 2900

 

 

September 2015

 

Our company started the production of new and manufactured furnaces crystal weighing 100 kg.

Parameter name unit number description
Sapphire crystal growth method Modified Kyropulos (KY) Technology and design development on the base of own long term experience
Crystal weight kg 100-105
Crystal size:

Diameter (max)

High (max)

mm  

300

450

Crucible size:
Diameter (O.D.)High, total
mm 370

520

Tungsten crucible
Heating method Resistive, tungsten heater New design heater, long life time
Power supply main (50/60 Hz) V 380/400 3-phase, 5 wire
Heater’s supply voltage V 12 AC/DC 2 modifications, SCR or IGBT
Max power consumption (kW) kW 85
Actual power consumption at seeding kW 70 High energy saving
Total process (cycle) power consumption kW/h 20.000 Total process (whole cycle) time 16-17 days
Heating power control accuracy % +/-0,01 High accuracy power control
Grown crystal weight sensor capacity up to kg 150
Growing crystal weight measurement accuracy gr +/-5 Growing crystal actual weight (weight increment) control
Pulling shaft travelling rate mm/h 0.1-2.5 150 mm shaft travel length
Cooling system (water) Circulating water in closed system, under the automation control of software
Inlet water temperature С 20-30 distilled recycling water
Cooling water temperature stability С +/-2
Outlet water temperature, up to С 45 Water high temperature alarm
Water flow – approx. m3/h 8-9 adjustable
Inlet water pressure 105Pa/kgf/cm2 2.5+/-0.5 adjustable
Control system PLC (programmable controller)

Provides automation overall crystal growing process, except seeding

Growing process supervision
  • on the control panel, near the furnace
  • from the dispatcher’s PC in the control room
  • online via internet
Controlled parameters in the crystal growing program
  • heater voltage, current & power
  • growing crystal mass & weight increment in time
  • temperature of cooling water, chamber’s heat-sink value
  • crystal pulling & traverse speed
  • vacuum level in the growing chamber
Hot zones
  • made from refractory metals or
  • made from special ceramics and refractory metals
Dimensions (WxLxH) mm 2200x2000x2300
Total weight (with hot zone) kg 2900

July 2014

 

Successfully mastered the manufacture of new furnaces for weight crystal 95kg

Parameter name unit number description
Sapphire crystal growth method Modified Kyropulos (KY) Technology and design development on the base of own long term experience
Crystal weight kg 94-95
Crystal size:

Diameter (max)

High (max)

mm 300

400

Crucible size;
Diameter (O.D.)High, total
mm 350

520

Tungsten crucible
Heating method Resistive, tungsten heater New design heater, long life time
Power supply main (50/60 Hz) V 380/400 3-phase, 5 wire
Heater’s supply voltage V 12 AC/DC 2 modifications, SCR or IGBT
Max power consumption (kW) kW 75
Actual power consumption at seeding kW 65 High energy saving
Total process (cycle) power consumption kW/h 20.000 Total process (whole cycle) time 16-17 days
Heating power control accuracy % +/-0,01 High accuracy power control
Grown crystal weight sensor capacity up to kg 150
Growing crystal weight measurement accuracy gr +/-5 Growing crystal actual weight (weight increment) control
Pulling shaft travelling rate mm/h 0.1-2.5 150 mm shaft travel length
Cooling system (water) Circulating water in closed system, under the automation control of software
Inlet water temperature С 20-30 distilled recycling water
Cooling water temperature stability С +/-2
Outlet water temperature, up to С 45 Water high temperature alarm
Water flow – approx. m3/h 8-9 adjustable
Inlet water pressure 105Pa/kgf/cm2 2.5+/-0.5 adjustable
Control system PLC (programmable controller)

Provides automation overall crystal growing process, except seeding

Growing process supervision
  • on the control panel, near the furnace
  • from the dispatcher’s PC in the control room
  • online via internet
Controlled parameters in the crystal growing program
  • heater voltage, current & power
  • growing crystal mass & weight increment in time
  • temperature of cooling water, chamber’s heat-sink value
  • crystal pulling & traverse speed
  • vacuum level in the growing chamber
Hot zones
  • made from refractory metals or
  • made from special ceramics and refractory metals
Dimensions (WxLxH) mm 2200x2000x2300
Total weight (with hot zone) kg 2900

February 2014

 

Our company started to develop the stations for sapphire tape growing by Stepanov method (EFG) for smartphone glasses.

August 2013

 

Currently, for the first time in world practice, we have developed a hardware-software product with the code name «Technologist’s Calculator». This development is unique, and it embodies the results of experiments, physical and technological aspects of the growth of single crystals and unique engineering developments.

The Technologist’s Calculator allows us to automatically calculate the optimal growth program for a single crystal of leucosapphire weighing from 32 to 90 kg and integrate it into a common growth monitoring and control system for each specific stations.

The calculations take into account the mass and energy parameters of crystal growth, as well as the dimensions of the crucible, the charge mass, the diameter of the last constrictions, the speed of the rod, crystallization rate and power on the heater when the process is set to crystallization. In addition, the angles of growth of the growth cone and other parameters are set.

Any operator of low qualification can cope with work in the Technologist’s Calculator. All that is required from him is to enter several parameters into the dialog window and click the button “Calculate the growth program”. Then everything happens automatically without operator intervention.

An example of the display of a technological program in a control system for crystal growth is below:

 

February 2013

 

A special device has been developed that allows maintaining the viewing window in a transparent state (without pollution) for an unlimited time. This device is part of the television system, provides a good overview of the seed zone. The system allows the etching process to be carried out not only through the technological window by visual inspection, but also through the monitor screen. It is possible to conduct the process remotely, outside the area of growth stations.

October 2012

 

Based on the modernization strategy developed by us and the development directions of technological equipment for crystal growth, the concept of a new generation of growth stations is proposed. The concept is based on the complete exclusion of the “human factor” at all stages of the growth process: from the moment of receiving the melt, seeding and exit of the finished crystal.This will reduce energy consumption, improve the quality of crystals, and ultimately reduce the cost of the final product.

Knowledge of the intricacies of physical and chemical processes occurring during the crystallization from the melt, and knowledge of modern, non-traditional methods of obtaining and processing information, as well as its own processing methods and technical developments have allowed our development team of 15 people (scientists, technologists and engineers design) to create a new a type of growth equipment with a fundamentally new structure of a control and management system for the growth of a sapphire crystal, which has no analogues in the world.

Today an automatic hardware-software complex for technological control and growth management of leucosapphire crystals weighing up to 100 kg has been developed and is successfully testing.

The complex allows to:
1. Carry out automatic crystal seeding, control of constriction parameters with the possibility of visual control of the seeding process from a technologist’s remote workstation and, if necessary, intervention, in order to adjust the technological map of a specific growth process. In this case, a special mathematical apparatus for object recognition, color contrasting and grayscale image filtering is used.

before filtration
after filtration

 

 

 

 

 

 

 

 

2. 2D — visualization of the process of crystal growth from the melt in real time. The metric characteristics of constrictions are used to control the mass parameters of the growing crystal at the initial stage of cone growth..

3. New physical principles and mathematical methods have been developed for processing the information received, which will make it possible in the near future to exclude weight load cells from the information acquisition chain for controlling the crystal growth process. Strain gauges will remain only for monitoring the process from thetechnologist`s workplace and for documenting the weight indicators at each growth unit for analysis when developing new thermal units.

February 2012

We are conducting experimental work to test a three-phase heater of a new design. Preliminary results indicate that the life of the heater can be increased several times.

November 2011

An active development of a new control system is underway to significantly reduce temperature fluctuations during the growth process.