Sapphire for LEDsSapphire for LEDs Sapphire ingots are mainly used for high brightness LED substrates (2-6 inches). LED applications: lamps of all types, backlit TVs, laptops, mobile phones, outdoor advertising and etc. LED is the key sapphire application in our days. LED substrates are the most effective sapphire application in comparison of cost and quality.

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Sapphire for microelectronicsSapphire for microelectronics Sapphire substrates are the largest sapphire application. Sapphire substrates are used for semiconductor film epitaxy (GaN, Si, AlGaN and others) and for producing of integrated circuits. The sapphire substrates advantages are inertness, mechanical load and high temperature operation ability, large diameter. Therefore sapphire substrates are used even when lattice parameters don’t coincide with the heteroepitaxial structure parameters.

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Sapphires for opticsSapphires for optics Sapphire is widely used for optic and optoelectronic devices such as: observation windows (with dimensions from several millimeters to several hundred millimeters) used on land, underwater and in space; lenses and prisms; all temperature LEDs; focusing cones; high-temperature protective covers for thermocouples; special lamp shells; navigation device protective caps and many others.

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Sapphires for medical equipmentSapphires for medical equipment Sapphire applications in medicine: implants, surgery and medical devices. Sapphire can be implanted into the body tissues because it doesn’t react with organic acids and tissues, sapphire surpass all construction materials in inertness and biocompatibility.

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Sapphires for watchesSapphires for watches Synthetic sapphire is used for watch jewels manufacturing (axial and friction bearings). It is an affordable, stable quality, solid and durable material for friction units. Watch glasses made of light-colored and wait sapphire are used by all known watch manufacturers. The matter is not just in fashion, there are no scratches on the sapphire glasses.

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Techsapphire Ltd.

News

September 2015

Our company started the production of new and manufactured furnaces crystal weighing 100 kg.


Parameter name unit number description
Sapphire crystal growth method

Modified Kyropulos (KY) Technology and design development on the base of own long term experience
Crystal weight kg 100-105

Crystal size:

Diameter (max)

High (max)

mm

300

450

Crucible size;

Diameter (O.D.)

High, total

mm

370

520

Tungsten crucible
Heating method

Resistive, tungsten heater New design heater, long life time
Power supply main (50/60 Hz) V 380/400 3-phase, 5 wire
Heater’s supply voltage V 12 AC/DC 2 modifications, SCR or IGBT
Max power consumption (kW) kW 82

Actual power consumption at seeding kW 75 High energy saving
Total process (cycle) power consumption kW/h 25.000 Total process (whole cycle) time 16-17 days
Heating power control accuracy % +/-0,01 High accuracy power control
Grown crystal weight sensor capacity up to kg 150

Growing crystal weight measurement accuracy gr +/-5 Growing crystal actual weight (weight increment) control
Pulling shaft travelling rate mm/hour 0.1-2.5 150 mm shaft travel length
Cooling system (water) Circulating water in closed system, under the automation control of software
Inlet water temperature, С 20-30 distilled recycling water
Cooling water temperature stability С +/-2

Outlet water temperature, up to С 45 Water high temperature alarm
Water flow – approx. m3/h 8-9 adjustable
Inlet water pressure 105Pa/kgf/cm2 2.5+/-0.5 adjustable
Control system PLC (programmable controller)

Provides automation overall crystal growing process, except seeding

Growing process supervision
  • on the control panel, near the furnace
  • from the dispatcher’s PC in the control room
  • online via internet
Controlled parameters in the crystal growing program
  • heater voltage, current & power
  • growing crystal mass & weight increment in time
  • temperature of cooling water, chamber’s heat-sink value
  • crystal pulling & traverse speed
  • vacuum level in the growing chamber
Hot zones
  • made from refractory metals or
  • made from special ceramics and refractory metals
Dimensions (WxLxH) mm 2200x2000x2300

Total weight (with hot zone) kg 3000

July 2014

Successfully mastered the manufacture of new furnaces for weight crystal 95kg


Parameter name unit number description
Sapphire crystal growth method

Modified Kyropulos (KY) Technology and design development on the base of own long term experience
Crystal weight kg 94-95

Crystal size:

Diameter (max)

High (max)

mm

300

400

Crucible size;

Diameter (O.D.)

High, total

mm

350

520

Tungsten crucible
Heating method

Resistive, tungsten heater New design heater, long life time
Power supply main (50/60 Hz) V 380/400 3-phase, 5 wire
Heater’s supply voltage V 12 AC/DC 2 modifications, SCR or IGBT
Max power consumption (kW) kW 80

Actual power consumption at seeding kW 65 High energy saving
Total process (cycle) power consumption kW/h 20.000 Total process (whole cycle) time 16-17 days
Heating power control accuracy % +/-0,01 High accuracy power control
Grown crystal weight sensor capacity up to kg 150

Growing crystal weight measurement accuracy gr +/-5 Growing crystal actual weight (weight increment) control
Pulling shaft travelling rate mm/hour 0.1-2.5 150 mm shaft travel length
Cooling system (water) Circulating water in closed system, under the automation control of software
Inlet water temperature, С 20-30 distilled recycling water
Cooling water temperature stability С +/-2

Outlet water temperature, up to С 45 Water high temperature alarm
Water flow – approx. m3/h 8-9 adjustable
Inlet water pressure 105Pa/kgf/cm2 2.5+/-0.5 adjustable
Control system PLC (programmable controller)

Provides automation overall crystal growing process, except seeding

Growing process supervision
  • on the control panel, near the furnace
  • from the dispatcher’s PC in the control room
  • online via internet
Controlled parameters in the crystal growing program
  • heater voltage, current & power
  • growing crystal mass & weight increment in time
  • temperature of cooling water, chamber’s heat-sink value
  • crystal pulling & traverse speed
  • vacuum level in the growing chamber
Hot zones
  • made from refractory metals or
  • made from special ceramics and refractory metals
Dimensions (WxLxH) mm 2200x2000x2300

Total weight (with hot zone) kg 2900

February 2014г.

Our company started to develop the stations for sapphire tape growing by Stepanov method (EFG) for smartphone glasses.

August 2013

At present for the first time in world practice we have developed a hardware and software product, code-named “technologist calculator”. Our development is unique, and it embodies the results of experiments, physical and technological aspects of single crystal growth and unique engineering design.

Результат рассчета программыThe development embodies the results of numerous experiments, physical and technological aspects of the single crystal growth based on the technical features of the growth equipment.
“Technologist calculator” can automatically calculate the optimal growth program for single crystals weighing from 32 to 90 kg and integrate it into the overall control system for each station.
The calculations take into account the mass and energy parameters of the crystal growth, crucible size, weight of loaded charge, the diameter of the last neck growth step, speed of shaft pulling, crystallization rate and heater power during the crystallization. In addition, expansion angles of the growth cone and other parameters could be set.

Диалоговое окно "Калькулятора технолога"Any low-skilled operator is able to use “Technologist calculator”.
You only need to enter the settings in the dialog box and click the “Calculate growth program.” Then everything happens automatically without operator’s intervention.

The example of the program in control and management system is shown below:

Пример программы

February 2013

Special device which allows maintaining a viewing window in the transparent state (without coating) indefinitely was developed.This device is part of a television system that provides a good overview of the seeding area.The system enables the seeding process not just by visual inspection through the viewing window, but also through the monitor screen. This enables to carry out the process remotely, outside the location of growth stations.

October 2012

New concept of equipment is introduced on the basis of our modernization strategy and development of equipment for sapphire crystal growth. The concept is the complete exclusion of the “human errors” in all stages of the growth process from the moment of melting, seeding and crystal yield. This will reduce energy costs, improve the crystal quality and eventually reduce the cost of the final product.

Knowledge of details of physical and chemical processes that occur during crystallization of the melt as well as knowledge of modern and non-traditional methods of obtaining and processing of information, as well as our own technological methods and technical developments have allowed to our team of 15 persons(scientists, technologists and design engineers (scientists, technologists and design engineers) to develop new type of growth equipment with principally new structure of sapphire crystal growth control system, which has no analogues in the world.

At the present time, automatic hardware and software system of technological sapphire crystal growth control is developed and successfully passing tests.

The system allows:

1. Automatic seeding and control of waist parameters with visual control of seeding processfrom remote workstation andintervention for correction of specific technical data sheet if necessary.

Before filtering

After filtering

2. 2D and in the nearest future 3D visualization of the crystal growth process in real time.

Visualization of crystal growth profile and geometry.

3. Already developed new physical principles and mathematical methods of obtained information processing, which will enable in the nearest future to eliminate the load cells from the information chain of crystal growth process control. Load cells will only be for monitoring and recording of weights for analysis and development of new hot zones.

February 2012

We’re testing new design three-phase heater. According to preliminary results, the life of the heater could be increased in several times.

November 2011

Our company also develops a new control system for significant temperature fluctuation reduction during the growth process.